Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

Unusual two-dimensional multicomponent self-assembly probed by scanning tunneling microscopy.

Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Probe and Secondary Electron Microscopy

The availability of two-dimensional (2-D) dopant profiling techniques to Silicon Carbide (SiC) pn junction is discussed. We compared the results of scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), and secondary electron microscopy (SEM), where the cross-sections of a SiC wafer with n-type epi-layers and highly-doped p and n regions were used. The SSRM curr...

Microscopy, Scanning Tunneling

Ultrafast Scanning Tunneling Microscopy

Scanning Tunneling Microscopy

The invention of the scanning tunneling microscope was a singularity event in the field of surface science and condensed matter physics. The ability to visualize individual atoms in an atomic structure was a huge step forward in experimental development, one for which the inventors were awarded the Nobel Prize in Physics in 1986. While a groundbreaking development, the Scanning Tunneling Micros...